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S T M7096N
S amHop Microelectronics C orp.
Aug 17,2005
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S
( m W ) T yp
ID
13A
R DS (ON)
S uper high dense cell design for low R DS (ON).
9 @ V G S = 10V 13 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage. Thermal P ad E xposed with S tandard S OP -8 Outline
Bottom-side Drain Contact
DD
DD
D G
S OP -8 E xpos ed
1S
SS
D D D D
5 6 7 8
4 3 2 1
G S S S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 30 20 13 40 1.7 3.0 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 40 C /W
1
S T M7096N
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
Parameter
5
S ymbol
BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg
c
Condition
VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 12A VGS =4.5V, ID= 10A VDS = 10V, VGS = 10V VDS = 10V, ID = 10A
Min Typ C Max Unit
30 1 V uA 100 nA 1 1.7 9 13 10 25 2300 300 140 3 21 20 75 17 39.5 17.5 5 7 3 V
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 12.5 m ohm 18 m ohm A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =15V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 15V ID = 1 A VGS = 10V R GE N = 6 ohm VDS =15V, ID =12A,VGS =10V VDS =15V, ID =12A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =15V, ID = 12A VGS =10V
2
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge
tD(ON) tr tD(OFF) tf Qg
ns ns ns ns nC nC nC nC
S T M7096N
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is = 1.7A
Min Typ Max Unit
0.76 1.3 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
25 V G S =4.5V
V G S =8V
20 V G S =3V 25 C
20
ID, Drain C urrent(A)
15
V G S =10V
ID, Drain C urrent (A)
15
10 T j=125 C 5 -55 C
10 5 0
0
0 0.5 1 1.5 2 2.5 3
0
0.7
1.4
2.1
2.8
3.5
4.2
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
30 1.6
F igure 2. Trans fer C haracteris tics
R DS (ON), On-R es is tance Normalized
25
1.4 1.2 1.0 0.8 0.6 0.4 -55
V G S =4.5V ID=10A
V G S =10V ID=12A
R DS (on) (m W)
20 15 10 V G S =10V 5 0
V G S =4.5V
0
5
10
15
20
25
-25
0
25
50
75
100 125
T j( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
3
S T M7096N
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
30
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
ID=12A
Is , S ource-drain current (A)
25
10.0
R DS (on) (m W)
20 70 C 15 25 C 10 5 0 125 C
125 C 25 C 70 C
1.0
0 2 4 6 8 10
0.4
0.6
0.8
1.0
1.2
1.4
V G S , G ate-S ource Voltage (V )
V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T M7096N
3000
V G S , G ate to S ource V oltage (V )
10 8 6 4 2 0 VDS =15V ID=12A
2500
C is s
C , C apacitance (pF )
2000 1500 1000 C os s 500 0 C rs s 0 5 10 15 20 25 30
6
0
6
12
18
24
30
36
42 48
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
600
S witching T ime (ns ) ID, Drain C urrent (A)
T D(off) Tr T D(on) Tf
50
N)
100 60 10
10
RD
L im
it
10
S
(O
ms
10
DC
0m
1s
s
1
1 1
V DS =15V ,ID=1A V G S =10V
0.1 0.03
VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50
6 10
60 100 300 600
R g, G ate R es is tance (W)
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
F igure 12. Maximum S afe O perating Area
5
S T M7096N
V DD ton toff tr
90%
5
VG S R GE N
V IN D G
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
10%
INVE R TE D
90%
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
10
F igure 12. S witching Waveforms
Normalized Transient
Thermal Resistance
1
0.5 0.2 0.1 P DM t1
on
0.1
0.05 0.02 0.01 1. 2. 3. 4.
t2
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.01 0.00001
R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
6
S T M7096N
PAC K AG E OUT LINE DIME NS IONS
S OP -8
7
S T M7096N
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:P
PACKAGE SOP 8N 150O A
12.0 O0.3
B
5.0 O0.1
C
4.0 O0.1
D
6.5 O0.1
E
1.5 O0.1
SO-8 Reel
UNIT:P
TAPE SIZE
12 P
REEL SIZE
r300
M
300
N
101
W
10 O 0.2
8

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